I recently built a version of this buffer. The 2N5457s I bought on Aliexpress turned out to be fake, so I used a J113 instead. So this post is just to share what data I have on J113s in case somebody else might find it useful.
The
datasheet values given for the J113 are Vgs(off) between -0.5V and -3.0V and a minimum Idss of 2mA. The value given for Idss is a little misleading, because typical values are much higher than the minimum.
Here are the Vgs(off)/Idss values I measured for 10 Onsemi brand J113s:
-1.69V/17.2mA
-1.70V/17.8mA
-1.71V/17.7mA
-1.72V/18.0mA
-1.74V/18.1mA
-1.75V/18.5mA
-1.80V/19.2mA
-1.81V/19.0mA
-1.82V/19.4mA
-1.89V/20.3mA
Average: -1.76V/18.5mA
And here are two charts from the datasheet, which show typical values for Id vs Vgs for a range of Vgs(off) values. Idss could be anywhere from 7mA to almost 40mA, so even the lowest typical values are well above the datasheet minimum.
For Vgs(off)=-1.6V the Idss shown is around 16mA. For Vgs(off)=-2.0V the Idss shown is a little over 20mA.
My ten sets of values all sit within the range bounded by those two pairs, so my measurements are a fairly good match to these charts.
I wanted to see how much difference the variation in Vgs(off) and Idss made in practice, so I breadboarded the above circuit and picked three J113s to measure that covered the range of values I have. Here are the Vgs(off) and Idss for the 3 JFETs I used:
#1: 1.69V/17.2mA
#2: 1.75V/18.5mA
#3: 1.89V/20.3mA
With the breadboard circuit exactly as in JohnH's diagram, I measured the following values for source voltage and current draw:
JFET #1: 5.95V/271µA
JFET #2: 6.01V/274µA
JFET #3: 6.15V/281µA
With R12 increased from 2.2M to 3.3M, and everything else the same I measured the following values for source voltage and current draw:
JFET #1: 5.18V/236µA
JFET #2: 5.23V/239µA
JFET #3: 5.36V/245µA
I tried importing and editing the Onsemi J113 model in LTSpice to match JFET #2, and I got results that were very close to the real world measurements; source voltage within 0.1V and current within 5µA for both versions of the breadboard circuit. The reason I wanted to do this is so I could run a transient and fourier analysis and see how much headroom I had available, and what the performance was like at low battery levels.
With R12 set to 2.2M and a 9V supply, and with the buffer output connected to a 20k load, the circuit can handle an input level of over 5V peak-to-peak with less than 0.5% THD.
At 4.8V supply, that drops to just under 1.4V peak-to-peak at 0.5% THD.
With R12 set to 3.3M, headroom at 9V supply is around 4.2V peak-to-peak at 0.5% THD.
At 4.8V supply, headroom is around 2.4V peak-to-peak at 0.5% THD.
With R12 at 3.3M, current draw is lower and headroom at low supply voltage is higher, so that's the version I used.
I put the buffer in a HSH strat copy and it sounds very good- clean and clear with no colouration that I could hear. I added 220pF and 470pF caps on DIP switches, and I found that the single coil and split selections sounded good with 470pF, or even 790pF of added capacitance, but I liked the sound of the humbuckers better with just 220pF added. I think it's very much worth experimenting with a few different cap values and seeing which you like best.